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Our recent publication on Engineering Erbium-implanted Lithium Niobate Films for Integrated Quantum Applications in APL Materials
Enabling Quantum and Nanophotonic Technologies With Nanofabrication and Materials Science
Our research vision is to advance the scientific foundation that underlies the current and potential future of materials and quantum sciences. Our research directions focus to advance fundamental understanding and the experimental knowledge for the development of new scalable nanostructured materials and novel 2D materials for emerging nanoscale applications, and quantum sources for telecom quantum network technologies deeply impacting our lives as we are moving towards the fourth industrial revolution.
On-Demand CMOS-Compatible Fabrication of Self-Aligned Nanostructures
On-Demand CMOS-Compatible Fabrication of Self-Aligned Nanostructures
The field of semiconductor nanowires (NWs) has become one of the most active research areas. However, progress in this field has been hindered, due to the difficulty in controlling defect density, and deterministic assembly of NW arrays, parameters important for mass production of electronic nanodevices and the creation of practical nanoscale-based systems. Our group is focused on developing CMOS-compatible fabrication strategies for nanostructured materials, for example silicon carbide (SiC) and silicon oxycarbide NW arrays. These strategies enable the development of scalable ultrathin nanostructures, with reduced defect density, which can serve as an experimental platform to investigate NW-based emerging technologies, such as nanowire sensing, nanophotonics, and quantum photonics.
This work was partially supported by Gelest (A Group Company of Mitsubishi Chemical Group). This work was also supported by the CATN2 (CENTER FOR ADVANCED TECHNOLOGY IN NANOMATERIALS AND NANOELECTRONICS) Matching Investment Program (MIP).
Related research work:
On-demand CMOS-Compatible Fabrication of Ultrathin Self-Aligned SiC Nanowire Arrays
Scalable Nanophotonic Structures for Long-Distance Quantum Communications
Scalable Nanophotonic Structures for Long-Distance Quantum Communications
Non-classical (single-photon) light sources emitting in the near-infrared region of the electromagnetic spectrum, where signal transmission losses in optical fibers are small, are essential for the development of long-distance optical quantum networks. Our research work has been aimed to advance fundamental understanding and the experimental knowledge to develop critical optical properties of rare earth ion dopants, coupled and enabled by new nanophotonic structures, which provide high integration capabilities with silicon nanophotonics. We have introduced a new class of CMOS-compatible silicon carbide nanowire-based photonic crystal structures. These nanophotonic structures enable strong coupling and on-demand placement of rare-earth erbium (Er3+) ions in the nanowires. The technologically important low-loss Er3+-induced 1540 nm emission can thus be controlled and substantially enhanced by these photonic nanostructures. Benefits from the fundamental understanding of erbium emission in such scalable nanophotonic structures can expedite advances towards room temperature telecom single-photon sources.
This material is based upon work supported by the National Science Foundation under Grant No. 1842350. (EAGER: On-Demand Silicon Carbide Photonic Nanostructures for Quantum Optoelectronics at Telecom Wavelengths)
This work was also supported by the CATN2 (CENTER FOR ADVANCED TECHNOLOGY IN NANOMATERIALS AND NANOELECTRONICS) Matching Investment Program (MIP).
Related research work:
On-demand CMOS-Compatible Fabrication of Ultrathin Self-Aligned SiC Nanowire Arrays
Strong photoluminescence enhancement of silicon oxycarbide through defect engineering
Engineering Erbium-Implanted Lithium Niobate Films for Integrated Quantum Applications
Engineering Erbium-Implanted Lithium Niobate Films for Integrated Quantum Applications
The future of quantum communication is predicated on the development of scalable optical quantum devices that can be seamlessly integrated on-chip and are compatible with current chip-scale process technology and higher operational temperatures (≥77 K). Rare earth (RE)-doped materials have garnered significant attention as material platforms in emerging quantum information and integrated photonic technologies. Concurrently, advances in its nanofabrication processes have unleashed thin film lithium niobate (LN) as a leading force of research in these technologies, encompassing many outstanding properties in a single material. However, achieving the required nanometer-resolution integration of RE ions (REIs) for scalable and integrated quantum networks is impossible through diffusion doping REIs into crystals. Leveraging the scalability of ion implantation to integrate rare-earth erbium (Er3+), which emits at 1532 nm, into LN can enable a plethora of exciting photonic and quantum technologies operating in the telecom C-band. Toward this goal, we have been investigating the role of implantation and post-implantation processing in minimizing implantation-induced defectivity in thin film LN on insulator (LNOI). By leveraging this holistic study, we have recently demonstrated a cutting-edge ensemble optical linewidth of 140 GHz for Er emission in x-cut thin-film LN at 77 K. To the best of our knowledge, this linewidth measured at a higher temperature (77 K) is the narrowest when compared to the values reported for bulk-doped and implanted LN crystals at liquid helium temperatures (~3 K), showcasing the potential of our approach for higher-temperature operation devices.
This material is based upon work supported by the National Science Foundation under Grant No. 2138174-QuIC-TAQS. (QuIC-TAQS: Multifunctional integrated quantum photonic processor for quantum interconnect)
Related research work:
Pseudo-1D Materials and Polarization-Dependent Nanophotonic Devices
Pseudo-1D Materials and Polarization-Dependent Nanophotonic Devices
Emerging 2D gallium chalcogenides, such as gallium telluride (GaTe), are promising layered semiconductors that can serve as vital building blocks towards the implementation of nanodevices in the fields of nanoelectronics, optoelectronics, and quantum photonics. By leveraging our novel chemical passivation methods for environmental-stable GaTe flakes, our focus has been to study the anisotropy in the optical properties of GaTe nanomaterials and nanodevices. The anisotropy is caused by the 1D-like nature of the GaTe layer, as the layer comprises of Ga-Ga chains extending along the b-axis crystal direction. The identification of the b-axis in such anisotropic materials is imperative for the fabrication of polarization-dependent devices based on the generation and detection of polarized light, such as polarized photodetectors and light sources.
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